Development of antenna-coupled metal-insulator-metal diodes for infrared detection

The long-wavelength infrared (LWIR) band between 7 and 14 µm is significant for thermal imaging purposes because it coincides with the blackbody radiation peak of the human body and a low absorption window in the earth’s atmosphere. Also, at 10 µm wavelength, the earth’s terrestrial radiation is maximized and provides a good opportunity for untapped energy harvesting. These two factors combine to make a very strong need for a low-cost detector that operates at room temperature in this band. Antenna-coupled metal-insulator-metal (ACMIM) diodes are a leading candidate due to their high speed and potential manufacturability on Si substrates. In this work, Ni-NiO-Ni ACMIM diodes are fabricated using a two-step lithography process and an oxygen plasma oxidation. The device is characterized to both have current in the nA range and responsivities nearing 1000pA/W

Development of an optical nor gate transistor laser integrated circuit

The transistor laser combines the intrinsic switching property of a bipolar transistor and the coherent light output of a laser in a single device, making it uniquely suited for electro-optical integration. Furthermore, with the addition of waveguide structures, a transistor laser integrated circuit is well suited for monolithic logic processing using on-chip optical interconnects. Although there are still many challenges to overcome both on the device level and the integration level, a transistor laser integrated circuit can be an attractive alternative to conventional electrical integrated circuits based on complementary metal-oxide-semiconductor (CMOS) technology. The subject of this work is the design, process development, and fabrication of a transistor laser integrated circuit in the form of an optical NOR gate to demonstrate optical logic processing using the transistor laser. This work begins with a brief introduction to optical logic processing and why the transistor laser is ideal for this application. Details of the development of a high-speed GaAs photodiode are given to supplement the original transistor laser process with a vertically illuminated optical receiver. The development of the transistor laser optical NOR gate is described, including the design and operating principle as well as the two rounds of fabrication. The methods used to characterize the optical NOR gate are reported, followed by a discussion of the results. Finally, the work is summarized and future improvements to the current process as well as next generation transistor laser integrated circuit concepts are proposed

Development of an optical nor gate transistor laser integrated circuit

The transistor laser combines the intrinsic switching property of a bipolar transistor and the coherent light output of a laser in a single device, making it uniquely suited for electro-optical integration. Furthermore, with the addition of waveguide structures, a transistor laser integrated circuit is well suited for monolithic logic processing using on-chip optical interconnects. Although there are still many challenges to overcome both on the device level and the integration level, a transistor laser integrated circuit can be an attractive alternative to conventional electrical integrated circuits based on complementary metal-oxide-semiconductor (CMOS) technology. The subject of this work is the design, process development, and fabrication of a transistor laser integrated circuit in the form of an optical NOR gate to demonstrate optical logic processing using the transistor laser. This work begins with a brief introduction to optical logic processing and why the transistor laser is ideal for this application. Details of the development of a high-speed GaAs photodiode are given to supplement the original transistor laser process with a vertically illuminated optical receiver. The development of the transistor laser optical NOR gate is described, including the design and operating principle as well as the two rounds of fabrication. The methods used to characterize the optical NOR gate are reported, followed by a discussion of the results. Finally, the work is summarized and future improvements to the current process as well as next generation transistor laser integrated circuit concepts are proposed.U of I OnlyAuthor requested U of Illinois access only (OA after 2yrs) in Vireo ETD syste

ANALYSIS OF THE INHIBITORY POTENTIAL OF CLINICAL STREPTOCOCCUS SALIVARIUS ISOLATES FROM SALIVA AND DORSAL OF TONGUE OF ADULTS ON ENTEROCOCCAL FAECALIS GROWTH

Objective: The aim of this study is to analyze the inhibitory potential of Streptococcus salivarius isolates from the saliva and dorsum of the tongue of adults on Enterococcal faecalis American Type Culture Collection (ATCC) 29212.Methods: Deferred antagonism and agar well diffusion methods were used to analyze the potential of S. salivarius to inhibit E. faecalis growth with S. salivarius ATCC 13419 as the positive control.Result: The maximum inhibitor diameter for each isolation was 11.17 mm at 1010 CFU for the dorsum of tongue isolates and 8.17 mm at 109 CFU for saliva isolates.Conclusions: Clinical S. salivarius isolates from the dorsum of tongue had greater potential for inhibiting E. faecalis growth compared to the saliva isolates and control bacteria